| 摘要 |
The invention relates to a semiconductor arrangement and method for production thereof, wherein the semiconductor arrangement is provided with an integrated circuit arranged on a substrate. The integrated circuit is structured on the front face of the substrate and at least one capacitor is connected to the integrated circuit, wherein the at least one capacitor is designed as a monolithic deep structure in trenches. The trenches are arranged in at least one first group and at least one second group, the trenches of a group running essentially parallel to each other and the first and second group are at an angle to each other, essentially at right angles to each other.
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