FIELD EFFECT TRANSISTOR, AND DISPLAY APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a TFT which has excellent electric characteristics and small change in characteristic with respect to compositional variation by applying a specific laminated configuration to a channel layer.

SOLUTION: A field-effect transistor includes at least a semiconductor layer and a gate electrode disposed over the semiconductor layer with a gate insulating film therebetween, wherein the semiconductor layer includes a first amorphous oxide semiconductor layer having at least one element selected from the group of Zn and In, and a second amorphous oxide semiconductor layer having at least one element selected from among Ge and Si and at least one element selected from the group of Zn and In. The composition of the first amorphous oxide semiconductor layer is different from the composition of the second amorphous oxide semiconductor layer.

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