| 摘要 |
PROBLEM TO BE SOLVED: To provide a DC plasma CVD apparatus capable of obtaining a vapor growth film such as diamond of high quality free from any defect caused by the drop of a product by a fixed electrode, and a method for manufacturing the diamond of high quality using the apparatus. SOLUTION: The DC plasma CVD apparatus has at least a fixed electrode, and a substrate stage which is also used for an electrode for loading a substrate thereon. The substrate stage is not located on the line extending in the vertical direction from the center of the fixed electrode. Further, the angle formed between the line for connecting the center of the substrate stage to the center of the fixed electrode and the line extending in the vertical direction is≤90°. COPYRIGHT: (C)2010,JPO&INPIT |
