发明名称 |
Method for revealing emergent dislocations in a germanium-base crystalline element |
摘要 |
The invention relates to a method for detecting defects, more particularly emergent dislocations of an element having at least one crystalline germanium-base superficial layer. The method comprises an annealing step of the element in an atmosphere having a base that is a mixture of at least an oxidizing gas and a neutral gas enabling selective oxidizing of the emergent dislocations of the crystalline germanium-base superficial layer.
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申请公布号 |
US2010184303(A1) |
申请公布日期 |
2010.07.22 |
申请号 |
US20090654441 |
申请日期 |
2009.12.18 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
SANCHEZ LOIC;DEGUET CHRYSTEL |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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