| 摘要 |
Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula wherein: R is C-C-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C-C-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C-C-alkyl.
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