APPARATUS FOR CHEMICAL VAPOR DEPOSITION

摘要

PURPOSE: A chemical vapor deposition apparatus is provided to improve an operation rate of equipment by reducing a cleaning time by cleaning only an exhausting ceiling unit. CONSTITUTION: A substrate ceiling unit(50) forms a reactive chamber to epitaxially grow a substrate. A reactive chamber cover(16) covers a frame(25) which receives a susceptor and is connected to a reactive chamber cover support frame(80) and a cover connector(84). A heater(40) to supply heat to the substrate received in the susceptor is formed on the lower side of the susceptor. The heater provides the heat generated by an electric resistance to the substrate on the susceptor. An exhausting unit(60) discharges the exhaust gas after the epitaxial-growth reaction.