发明名称 CIRCUIT FOR REDUCING THE READ DISTURBANCE IN MEMORY
摘要 A memory includes an internal data block and a temporary storing unit. The internal data block stores internal data of the memory. The temporary storing unit temporarily stores the internal data of the memory after the memory is powered on.
申请公布号 US2010180183(A1) 申请公布日期 2010.07.15
申请号 US20090351984 申请日期 2009.01.12
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 HUNG SHUO-NAN;HUNG CHUN-HSIUNG
分类号 G06F11/10 主分类号 G06F11/10
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