发明名称 |
METHODS AND APPARATUS FOR DUAL CONFINEMENT AND ULTRA-HIGH PRESSURE IN AN ADJUSTABLE GAP PLASMA CHAMBER |
摘要 |
A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap. |
申请公布号 |
WO2010080420(A2) |
申请公布日期 |
2010.07.15 |
申请号 |
WO2009US68183 |
申请日期 |
2009.12.16 |
申请人 |
LAM RESEARCH CORPORATION;FISCHER, ANDREAS;HUDSON, ERIC |
发明人 |
FISCHER, ANDREAS;HUDSON, ERIC |
分类号 |
H05H1/34 |
主分类号 |
H05H1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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