| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device which provides a smooth surface of silicon carbide while keeping a high activation ratio of impurities. SOLUTION: This method of manufacturing a silicon carbide semiconductor device is used for forming an impurity region on a surface layer of a silicon carbide substrate. The method of manufacturing a silicon carbide semiconductor device includes processes of: implanting impurities into the surface layer of the silicon carbide substrate; forming a carbon film on a surface of the silicon carbide substrate; preliminarily heating the silicon carbide substrate by using the carbon film as a protective film; and activating and heat-treating the silicon carbide substrate by using the carbon film as a protective film. COPYRIGHT: (C)2010,JPO&INPIT |
