发明名称 |
NONVOLATILE MEMORY DEVICE AND METHOD FOR OPERATING THE SAME |
摘要 |
<p>PURPOSE: A nonvolatile memory device and a method for operating the same are provided to execute a program at each layer through a common source line. CONSTITUTION: A memory cell array(10) comprises a plurality of memory cell array layers. The memory cell array layer comprises a plurality of memory blocks(BLK0-BLKn). A layer decoder(20) selects a cell array layer from a memory cell array of a three dimensional structure according to address information. A row decoder(30) selects a memory block of the memory cell array according to the address information. The row decoder selects a word line of the selected memory block. A page buffer(40) temporarily stores data which is stored in the memory cell in an operation mode. The page buffer senses the data stored in the memory cells.</p> |
申请公布号 |
KR20100081559(A) |
申请公布日期 |
2010.07.15 |
申请号 |
KR20090000850 |
申请日期 |
2009.01.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEOL, KWANG SOO;PARK, YOON DONG;KIM, SUK PIL |
分类号 |
G11C16/00;G11C16/02;H01L27/115 |
主分类号 |
G11C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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