发明名称 NONVOLATILE MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
摘要 <p>PURPOSE: A nonvolatile memory device and a method for operating the same are provided to execute a program at each layer through a common source line. CONSTITUTION: A memory cell array(10) comprises a plurality of memory cell array layers. The memory cell array layer comprises a plurality of memory blocks(BLK0-BLKn). A layer decoder(20) selects a cell array layer from a memory cell array of a three dimensional structure according to address information. A row decoder(30) selects a memory block of the memory cell array according to the address information. The row decoder selects a word line of the selected memory block. A page buffer(40) temporarily stores data which is stored in the memory cell in an operation mode. The page buffer senses the data stored in the memory cells.</p>
申请公布号 KR20100081559(A) 申请公布日期 2010.07.15
申请号 KR20090000850 申请日期 2009.01.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEOL, KWANG SOO;PARK, YOON DONG;KIM, SUK PIL
分类号 G11C16/00;G11C16/02;H01L27/115 主分类号 G11C16/00
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