发明名称 POST BAKING-FREE ETCHING RESIST
摘要 <P>PROBLEM TO BE SOLVED: To provide a photoresist composition having a high curing speed and excellent etching resistance even without needing post baking. <P>SOLUTION: This photoresist composition contains, as essential components, at least one kind of polymerizable compound (A) having at least two propenyl ether terminal groups, selected from a group of a monomer (A1), a polyether oligomer (A2) and a polyester oligomer (A3) each having a propenyl ether terminal group; and a photo-acid-generating agent (B). In the photoresist composition, a hydroxyl value of the polymerizable compound (A) is 0-10 mgKOH/g. The photoresist composition does not need the post baking. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010156877(A) 申请公布日期 2010.07.15
申请号 JP20080335616 申请日期 2008.12.29
申请人 SANYO CHEM IND LTD 发明人 SOGA KAZUYA
分类号 G03F7/027 主分类号 G03F7/027
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