发明名称 PROGRAMMABLE ROM USING TWO BONDED STRATA AND METHOD OF OPERATION
摘要 <p>A read only memory implemented as a 3D integrated device has a first stratum, a second stratum , and bonded inter-strata connections for coupling the first stratum to the second stratum. The physical bonding between the two strata implements the programming of the read only memory. The stratum may be in wafer form or in die form. The first stratum includes functional active devices (27, 46) and at least one non-programmed active device (41, 43). The second stratum includes at least conductive routing (17) to be associated with the at least one non-programmed active device. The bonded inter-strata connections include at least one bonded programmable inter-strata connection for programming the at least one non-programmed active device and for providing conductive routing to the programmed active device. The two strata thus form a programmed ROM. Other types of programmable storage devices may be implemented by bonding the two strata.</p>
申请公布号 KR20100081307(A) 申请公布日期 2010.07.14
申请号 KR20107007108 申请日期 2008.08.27
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 ALAM SYED M.;JONES ROBERT E.
分类号 G11C17/00;G11C17/18;H01L27/112 主分类号 G11C17/00
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