| 摘要 |
This invention proposes a method for making very low threshold voltage (Vt) metal-gate/high-&kgr; CMOSFETs using novel self-aligned low-temperature ultra shallow junctions with gate-first process compatible with VLSI. At 1.2 nm equivalent-oxide thickness (EOT), good effective work-function of 5.3 and 4.1 eV, low Vt of +0.05 and 0.03 V, high mobility of 90 and 243 cm2/Vs, and small 85° C. bias-temperature-instability <32 mV (10 MV/cm, 1 hr) are measured for p- and n-MOS.
|
