发明名称 Temperature control for performing heat process on resist film
摘要 A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points. The second step includes acquiring temperature distribution information by use of measured temperatures of the substrate placed on the hot plate, measured at measurement points before adjustment of the target temperatures, and then calculating adjustment information by use of the relation information acquired in the first step and the temperature distribution information, thereby determining adjustment information.
申请公布号 US7755003(B2) 申请公布日期 2010.07.13
申请号 US20070965093 申请日期 2007.12.27
申请人 TOKYO ELECTRON LIMITED 发明人 OOKURA JUN;SEKIMOTO EIICHI;NAKAYAMA HISAKAZU
分类号 C21D1/40;H05B1/02;H05B3/68 主分类号 C21D1/40
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