| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to improve image quality by protecting poly silicon of a gate electrode formed on a substrate. CONSTITUTION: Poly silicon and an oxide film(80) are formed on a semiconductor substrate(10). A first photo resist pattern is formed for etching the poly silicon and the oxide film. The oxide film and the poly silicon are etched by using a first photo resist pattern. A second photo resist pattern is formed on the semiconductor substrate and the oxide film for implanting an ion. A photo diode region is formed on the semiconductor substrate by performing an ion implantation process using the second photo resist pattern as an ion implantation mask.
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