METHOD AND APPARATUS FOR FABRICATING IB-IIIA-VIA2 COMPOUND SEMICONDUCTOR THIN FILMS

摘要

Methods and apparatus for fabricating IB-IIIA-VIA2 compound semiconductor thin films are provided. A method for fabricating IB-IIIA-VIA2 compound semiconductor thin films includes providing a substrate with a precursor film thereover, wherein the precursor film includes elements of group IB and group IIIA. An annealing process is performed on the substrate and the precursor film thereover and forms a group IB-IIIA alloy thin film over the substrate. A surface treatment is performed by transporting ionized group VIA elements to the group IB-IIIA alloy thin film to react therewith to thereby form an IB-IIIA-VIA2 compound semiconductor thin film.