METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating the capacitor of a semiconductor device is provided to suppress the deterioration of a dielectric layer during an upper electrode deposition process by preventing the penetration of ammonia into a lower titanium oxide layer using a capping layer. CONSTITUTION: A metal lower electrode is formed on a semiconductor substrate. A dielectric layer including a titanium oxide layer(435) is formed on the lower electrode. A capping layer(450) includes titanium nitride. The capping layer covers the dielectric layer and protects the titanium oxide layer from a reduction reaction. Titanium nitride is deposited on the capping layer in order to form an upper electrode(470).