| 摘要 |
PURPOSE: A method for separating the bottom electrode of a capacitor is provided to prevent the defect of a bunker during a following wet type dip-out process by preventing the damage of the sidewall and the bottom surface of the bottom electrode. CONSTITUTION: A bottom electrode separation film(101) is formed on a semiconductor substrate(21). The bottom electrode separation film comprises a first nitride film(24), a first oxide film(25), a second nitride film(26), and a second oxide film(27). The bottom electrode separation film has an open region. A conductive film is formed along the shape of the open region on the bottom electrode separation film. A protective film is formed on the conductive film in order to fill the open region. The bottom electrode is separated by simultaneously etching back the protective film and the conductive film.
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