发明名称 |
METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL |
摘要 |
PURPOSE: A method for manufacturing a silicon mono-crystalline is provided to eliminate bubbles in a crucible by simultaneously changing a pressure and a temperature in a chamber in a bubble elimination process. CONSTITUTION: A supporting shaft(12) is formed to a gravity direction by passing the lower center of a chamber(11). A graphite susceptor(13) is fixed on the upper end of the supporting shaft. A silica glass crucible(14) is housed in the graphite susceptor. A supporting shaft driving unit(16) elevates and rotates the supporting shaft. A seed chuck(17) supports a seed crystal. A wire(18) hangs the seed chuck.
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申请公布号 |
KR20100080411(A) |
申请公布日期 |
2010.07.08 |
申请号 |
KR20090131550 |
申请日期 |
2009.12.28 |
申请人 |
JAPAN SUPER QUARTZ CORPORATION |
发明人 |
AZUMA YUKINAGA;MORIKAWA MASAKI |
分类号 |
C30B29/06;C30B15/20 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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