发明名称 METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL
摘要 PURPOSE: A method for manufacturing a silicon mono-crystalline is provided to eliminate bubbles in a crucible by simultaneously changing a pressure and a temperature in a chamber in a bubble elimination process. CONSTITUTION: A supporting shaft(12) is formed to a gravity direction by passing the lower center of a chamber(11). A graphite susceptor(13) is fixed on the upper end of the supporting shaft. A silica glass crucible(14) is housed in the graphite susceptor. A supporting shaft driving unit(16) elevates and rotates the supporting shaft. A seed chuck(17) supports a seed crystal. A wire(18) hangs the seed chuck.
申请公布号 KR20100080411(A) 申请公布日期 2010.07.08
申请号 KR20090131550 申请日期 2009.12.28
申请人 JAPAN SUPER QUARTZ CORPORATION 发明人 AZUMA YUKINAGA;MORIKAWA MASAKI
分类号 C30B29/06;C30B15/20 主分类号 C30B29/06
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