发明名称 |
IMAGE SENSOR AND MANUFACTURING METHOD OF IMAGE SENSOR |
摘要 |
PURPOSE: A manufacturing method of the image sensor and image sensor forms the image sensing part at the upper part of the circuit layer. The area of the photo diode is increased and the fill factor is improved. CONSTITUTION: A wiring(150) and readout circuit(120) are formed in the first substrate(100). The readout circuit comprises the anodic bonding domain(140) formed in the first substrate. The anodic bonding domain comprises the first conductivity type ion implantation region and the second conductive type ion implantation region. The image sensing part is formed in upper part the readout circuit. The image sensing part comprises the first conductivity type conductive layer and the second conductive type conductive layer which is heterogeneously united.
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申请公布号 |
KR20100080133(A) |
申请公布日期 |
2010.07.08 |
申请号 |
KR20080138769 |
申请日期 |
2008.12.31 |
申请人 |
DONGBU HITEK CO., LTD. |
发明人 |
YOO, JAE HYUN;KIM, JONG MIN |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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