发明名称 |
SURFACE-EMITTING LASER ELEMENT, FABRICATION METHOD THEREOF, SURFACE-EMITTING LASER ARRAY, AND FABRICATION METHOD THEREOF |
摘要 |
A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a plurality of group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.
|
申请公布号 |
US2010172390(A1) |
申请公布日期 |
2010.07.08 |
申请号 |
US20070376911 |
申请日期 |
2007.05.21 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MATSUBARA HIDEKI;SAITO HIROHISA;NAKANISHI FUMITAKE;MATSUKAWA SHINJI |
分类号 |
H01S5/343;H01L33/00;H01S5/42 |
主分类号 |
H01S5/343 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|