| 摘要 |
PURPOSE: A method for manufacturing a semiconductor transistor is provided to increase the integration of a circuit by forming an NP diode for the gate electrode through NP doping. CONSTITUTION: An element isolation film(104) divides a semiconductor substrate into an active area and an element isolation region. A poly-silicon for a gate electrode is evaporated over the semiconductor substrate. An NP doped region is formed within the poly-silicon for the gate electrode through an ion implant process. The poly-silicon for the gate electrode is planarized. An NP diode(106") for the gate electrode is formed by patterning the poly-silicon for the gate electrode.
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