| 摘要 |
PURPOSE: A fine pattern forming method of a semiconductor device is provided to reduce manufacturing costs by using a multifunction hard mask layer instead of an amorphous carbon layer. CONSTITUTION: A hard mask layer(310) is formed on a layer to be etched(300). A sacrificial layer pattern is formed on the hard mask layer with a photo lithography process. A spacer(360A) is formed in the sidewall of the sacrificial layer pattern. The sacrificial layer pattern is removed. A USG(Undoped Silicon Glass) layer is deposited on a substrate. A hard mask layer pattern is formed by etching the hard mask layer. The etched layer is etched by using the hard mask layer pattern as an etch barrier.
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