| 摘要 |
<p>PURPOSE: A manufacturing method of an embedded flash memory device is provided to improve the electrical property of the manufactured device by flattening the rough upper surface of polysilicon. CONSTITUTION: An oxide-nitride-oxide film(110) is formed on a substrate(100) in which an embedded flash memory device would be formed. Polysilicon is formed on the oxide-nitride-oxide film. Impurities are inserted within the poly-silicon. A part of poly-silicon is removed. The poly-silicon is patterned so that a gate(121a) is formed.</p> |
