| 摘要 |
PURPOSE: A manufacturing method of a semiconductor device is provided to uniform the thickness of an insulating layer remaining in a fuse box and an EM box by gradually performing an etching process to form the EM(Etch Monitoring) box and the fuse box. CONSTITUTION: A fuse(117) is formed on the top of a semiconductor substrate(101). In order to cover fuse, an insulating layer in which an oxide film(133) and a nitride film are alternately laminated on the top of the semiconductor substrate is formed. The insulating layer is etched by etchant materials etching the oxide film and nitride film. The surface roughness of the insulating layer deceases by etching the insulating layer using the etchant material. Provided is the insulating layer in which a first interlayer insulating film(121), an etch stopping layer(123), a second interlayer insulating film(127), a first protective film(131), and a second protective film.
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