CONDUCTING MATERIALS OF IN-GA-ZN OXIDE COMPOUNDS AND THEIR SYNTHETIC METHOD

摘要

PURPOSE: An indium-gallium-zinc metallic oxide-based composition, a sintered material using thereof, and a transparent conductive film using thereof are provided to stably obtain a transparent conductive thin film with the high-conductivity and the high-transparency. CONSTITUTION: An indium(In)-gallium(Ga)-zinc(Zn) metallic oxide-based composition satisfies the atomic ratio condition marked with 0.20<=(In+Ga)/(In+Ga+Zn)<=0.70. In a sintered material formed with the indium-gallium-zinc metallic oxide-based composition satisfies the atomic ratio condition marked with 0.20<=(In+Ga)/(In+Ga+Zn)<=0.70. A transparent conductive film containing the indium-gallium-zinc metallic oxide-based composition satisfies the atomic ratio condition marked with 0.20<=(In+Ga)/(In+Ga+Zn)<=0.70.