| 摘要 |
<p>PURPOSE: A method for manufacturing a thin film transistor array substrate is provided to use three masks to manufacture a thin film transistor array substrate, thereby reducing the number of processes. CONSTITUTION: A first photoresist pattern is formed on a second metal layer for a gate. The first photoresist pattern is ashed to form a second photoresist pattern. A third photoresist pattern is formed on a metal layer for data. The third photoresist pattern is ashed to form a fourth photoresist pattern. The fourth photoresist pattern is etched by an etching mask so that source/drain electrodes(20f,20g) are formed.</p> |
