| 摘要 |
PURPOSE: A method for forming a silicon nitride film with an improved UV transmission property and a semiconductor device comprising the same are provided to reduce the refractive index and the absorbent index of the semiconductor device without a silicon nitroxide film by changing the chemical composition of the silicon nitride film. CONSTITUTION: A silicon nitride film is formed by injecting a precursor gas containing silicon source and a precursor gas containing nitrogen source into a plasma chamber. Under a condition which RF power is between 400 to 600W, nitrogen gas and hydrogen gas are injected in order to reduce the equivalent of silicon in the silicon nitride film. A process for forming the silicon nitride film and a process for reducing the equivalent of the silicon in the silicon nitride film are successively repeated.
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