| 摘要 |
PURPOSE: A method for forming a flash memory device is provided to stably form a contact hole exposing a junction region by ensuring the margin of a contact hole formation process. CONSTITUTION: Stacked patterns including an electric charge storage film(105), a dielectric film(107), and a poly-silicon film(109) is formed on a semiconductor substrate. An interlayer insulating film on the upper side of the semiconductor substrate fills spaces between the stacked patterns. A planarization process is performed to planarize the surface of the interlayer insulation layer until the poly-silicon film is exposed.
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