发明名称 CONDUCTIVE FILM STRUCTURE, FABRICATION METHOD THEREOF, AND CONDUCTIVE FILM TYPE PROBE DEVICE FOR ICS
摘要 A method for forming a conductive film structure is provided, which includes: providing an insulating substrate having a surface; forming a plurality of trenches in the surface of the insulating substrate, wherein the trenches are extended substantially parallel to each other; disposing the insulating substrate into a plating solution and plating conducting layers within the trenches to form a plurality of micro-wires; and stacking a plurality of the insulating substrates or winding or folding the insulating substrate along an axis substantially parallel to an extended direction of the micro-wires to form a conducting lump.
申请公布号 US2010164517(A1) 申请公布日期 2010.07.01
申请号 US20090426695 申请日期 2009.04.20
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 CHOU MIN-CHIEH;KAO TUNE-HUNE;TSAI JEN-HUI
分类号 G01R31/02;H01B5/00;H01B13/00 主分类号 G01R31/02
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