| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device capable of suppressing a decrease in efficiency of luminescence and increasing light output. <P>SOLUTION: The semiconductor light emitting device includes: an LED thin-film section 2 having an n-type GaN layer 22 and a p-type GaN layer 24; an n-type ZnO substrate 3 that is coupled to the LED thin-film section 2 at a side opposite to the side of the n-type GaN layer 22 in the p-type GaN layer 24 and has a planar size larger than that of the p-type GaN layer 24; a cathode electrode 4 that is formed at a surface side at a side opposite to the side of the p-type GaN layer 24 in the n-type GaN layer 22 and is electrically connected to the n-type GaN layer 22; and an anode electrode 5 electrically connected to the p-type GaN layer 24 via the n-type ZnO substrate 3 while being formed at the side of the same surface 31 as the side of the p-type GaN layer 24 in the n-type ZnO substrate 3. A heavily doped transparent thin film 6 made of a GZO thin film, AZO thin film, or IZO thin film having carrier concentration higher than that of the n-type ZnO substrate 3 is interposed between the p-type GaN layer 24 and the n-type ZnO substrate 3 at the LED thin-film section 2. <P>COPYRIGHT: (C)2010,JPO&INPIT |
