SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND SWITCH CIRCUIT

摘要

<P>PROBLEM TO BE SOLVED: To reduce a leakage current of a transistor. Ž<P>SOLUTION: A semiconductor device includes: a plurality of electric elements disposed adjacent to each other along the front face of a semiconductor material; a lower-layer protection insulation film containing no silicon, which covers the plurality of electric elements; and an upper-layer protection insulation film containing silicon, which is disposed on the lower-layer protection insulation film. In the semiconductor device, at least one of the plurality of electric elements could contain a metal that is to be silicided and the lower-layer protection insulation film could serve to prevent a contact between the metal contained in the electric element and the silicon contained in the upper-layer protection insulation film. The lower-layer protection insulation film could have a high-dielectric-constant layer having a relative permittivity of ≥10. The upper-layer protection insulation film could contain silicon and nitride. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž