| 摘要 |
Disclosed is a method for manufacturing a back side illumination image sensor. The method includes defining a pixel area by forming a first isolation area in a first substrate; forming a photo detecting unit buried in the pixel area; forming an ion implantation layer on the photo detecting unit; growing a second substrate on the first substrate having the ion implantation layer; forming a logic unit electrically connected to the first substrate on the second substrate; forming an insulting layer and an interconnection on the second substrate; and exposing the photo detecting unit by grinding a backside of the first substrate.
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