| 摘要 |
A memory includes memory cells, wherein during a first write operation in which first logical data is written in all memory cells connected to a first word line, a source line driver and a word line driver, the source line driver shifts a voltage of a selected source line corresponding to the first word line in a direction away from the voltage of the first word line and the word line driver shifts a voltage of a second word line in a same direction as a transition direction of voltage of a selected source line, and during a second write operation in which second logical data is written in a selected cell connected to the first word line, the source line driver and the word line driver shift voltages of the selected source line and the second word line in a direction approaching the voltage of the first word line.
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