发明名称 PATTERN-CORRECTION SUPPORTING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND PATTERN-CORRECTION SUPPORTING PROGRAM
摘要 Design data corresponding to a target layout pattern is created, a layout value of the created design data is changed, optical proximity correction is applied to a layout pattern obtained from the changed design data, a pattern on wafer formed on a wafer to correspond to the layout pattern is calculated by using a photomask on which the layout pattern subjected to the optical proximity correction is formed, and the pattern on wafer and the target layout pattern before the change of the layout value are compared.
申请公布号 US2010167190(A1) 申请公布日期 2010.07.01
申请号 US20090612163 申请日期 2009.11.04
申请人 TAKAHATA KAZUHIRO;MIMOTOGI SHOJI 发明人 TAKAHATA KAZUHIRO;MIMOTOGI SHOJI
分类号 G03F7/20;G03F1/36;G03F1/68;G03F1/70;G06K9/00 主分类号 G03F7/20
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