| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving a gate breakdown voltage comparing to the conventional identically sized semiconductor device, reducing an area of element isolation region by making an element isolation layer the structure including no bird's beak to miniaturize the element, and to provide a method of manufacturing the semiconductor device. SOLUTION: The method of manufacturing the semiconductor device forms a LOCOS (local oxidation of silicon) film extended from the element forming region to the element isolation region on the surface of the semiconductor substrate. A gate oxide film connected to the LOCOS film is formed on the semiconductor substrate in the element forming region. A conductive film is formed so as to cover the LOCOS film and the gate oxide film. A gate electrode covering part of the gate oxide film and the LOCOS film is formed by partially etching the conductive film. The LOCOS film is divided into the element isolation layer and a highly thickened part for composing the end of the gate oxide film by partially etching the LOCOS film exposed by the etching of the conductive film. A drain region and a source region are formed at the position sandwiching the gate electrode by conducting the ion implantation to the surface of the semiconductor substrate exposed by the etching of the LOCOS film. COPYRIGHT: (C)2010,JPO&INPIT |
