| 摘要 |
PURPOSE: A method for fabricating an isolation layer of a semiconductor device is provided to suppress inside of an element isolation layer by growing a silicon substrate in epitaxial after forming a trench and implanting impurity into an epitaxial layer. CONSTITUTION: A trench is formed in a semiconductor substrate(100). An epitaxial silicon layer is formed inside the trench by epitaxially growing the semiconductor substrate . A photoresist pattern(120) is formed on the epitaxial silicon layer. An impurity is inserted into the epitaxial silicon layer. The trench is gap-filled with an oxide. An element isolation film is formed by planarizing the oxide.
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