发明名称 Power FET gate charge recovery
摘要 A circuit for recovering charge at the gate of an output transistor arranged to drive the output of a switching circuit such as a switching regulator or controller. A substantial portion of the charge for each switching cycle is recovered under a wide range of load conditions for the switching circuit, e.g., no load, partial load, or full load. Also, charge recovery operates effectively with a switching circuit that is arranged to switch in a synchronous or asynchronous manner. Additionally, if the output voltage of a switching circuit is 12 or more volts, the amount of charge that can be saved can be relatively substantial.
申请公布号 US7746153(B1) 申请公布日期 2010.06.29
申请号 US20070938081 申请日期 2007.11.09
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 MEGAW DAVID JAMES
分类号 H03K17/16 主分类号 H03K17/16
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