FORMATION OF HIGH-K GATE STACKS IN SEMICONDUCTOR DEVICES

摘要

PURPOSE: A formation method of a high-K gate stack of a semiconductor apparatus is provided to improve channel carrier mobility by limiting an oxygen vacancy inside of an area separated from a channel. CONSTITUTION: A first high-K metal oxide layer is formed on a semiconductor substrate. A complex layer(4) consisting of a second high-K metal oxide layer(6) is formed on a dipole induction layer(5). A metal gate electrode(7) is formed on the complex layer. The dipole induction layer is located between the gate electrode and the substrate. The dipole induction layer includes one among a lanthanum and a yttrium at least.