| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which reduces exfoliation of accessory pattern. SOLUTION: The manufacturing method is provided with a preparing process and a subsequent dicing process. The preparing process prepares a semiconductor wafer 10 which has the following structure, that is, a group of accessory pattern which is aligned in the direction that a scribing wire region 22 extends is formed in the scribing wire region. A width Wc of end accessory pattern 24f situated in an end of the accessory pattern row 24 is wider than the width of inside accessory pattern 24e which is adjacent to the end accessory pattern 24f. The junction area of the end accessory pattern 24f and a silicon layer of a semiconductor wafer 10 is larger than the junction area of the inside accessory pattern 24e and the silicon layer. In the dicing process, the wafer is cut, which is applied with the accessory pattern row, so that the end accessory pattern is situated in the downstream side of the cut direction in the accessory pattern row. COPYRIGHT: (C)2010,JPO&INPIT
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