| 摘要 |
<P>PROBLEM TO BE SOLVED: To miniaturize an imaging device which suppresses degradation in imaging characteristics even if pixel size is reduced. <P>SOLUTION: Four sides of a floating diffusion region, provided in vertical two pixels times horizontal two pixels, are enclosed with a transfer transistor. The pixels share an amplifier transistor, a reset transistor, and a floating diffusion. The four pixels are arranged vertically to constitute a solid-state imaging device whose basic configuration unit is eight pixels. A drain electrode of a reset transistor RST and a drain electrode of an amplifier transistor AMP are separately provided. The present invention can be applied to an imaging element that uses CMOS. <P>COPYRIGHT: (C)2010,JPO&INPIT |
