| 发明名称 |
POLISHING SOLUTION FOR CMP AND POLISHING METHOD USING THE POLISHING SOLUTION |
| 摘要 |
<p>A polishing solution for CMP contains abrasive grains, an additive and water, and an organic compound satisfying predetermined conditions is mixed as the additive. The polishing method is provided for substrates having a silicon oxide film on the surface, and is provided with a step of polishing the silicon oxide film using a polishing pad, while supplying the polishing solution for CMP to between the silicon oxide film and the polishing pad.</p> |
| 申请公布号 |
WO2010067844(A1) |
申请公布日期 |
2010.06.17 |
| 申请号 |
WO2009JP70692 |
申请日期 |
2009.12.10 |
| 申请人 |
HITACHI CHEMICAL COMPANY, LTD.;SATOU EIICHI;OOTA MUNEHIRO;CHINONE KANSHI;NOBE SHIGERU;ENOMOTO KAZUHIRO;KIMURA TADAHIRO;FUKASAWA MASATO;HABIRO MASANOBU;HOSHI YOUSUKE |
发明人 |
SATOU EIICHI;OOTA MUNEHIRO;CHINONE KANSHI;NOBE SHIGERU;ENOMOTO KAZUHIRO;KIMURA TADAHIRO;FUKASAWA MASATO;HABIRO MASANOBU;HOSHI YOUSUKE |
| 分类号 |
H01L21/304;B24B37/00;C09K3/14 |
主分类号 |
H01L21/304 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
