SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS

摘要

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturable when a method for patterning a semiconductor layer by a difference in level of a barrier plate pattern is applied to manufacturing of a bottom-gate/top-contact type organic TFT where a source electrode and a drain electrode are formed by using a printing method. Ž<P>SOLUTION: The semiconductor device 1 includes: an island pattern 5 formed on a substrate 3; a gate electrode 7 extended to the upper part of the island pattern 5; a gate insulating film 9 arranged on the substrate 3 to cover the gate electrode 7; a barrier plate pattern 11 having an opening part 11a including the island pattern 5 and arranged on the gate insulating film 7; a semiconductor layer 13 arranged to be divided for covering the bottom face of the opening part 11a; and the source electrode 15s and the drain electrode 15d arranged on the semiconductor layer 13 above the island pattern 5. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž