| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist material using an additive of a resist material for immersion lithography which is excellent in water repellency and water slipping property, causes few development defects, and ensures a good resist pattern shape after development, and a pattern forming process using the material. <P>SOLUTION: The resist material includes (A) a polymeric compound having recurring units represented by general formula (1), (B) a polymeric compound having a skeleton derived from lactone ring and/or hydroxyl group and/or maleic anhydride, the polymeric compound becoming soluble in alkaline developer under the action of acid, (C) a compound which generates acid upon exposure to high-energy radiation, and (D) an organic solvent. The resist material has excellent transparency to radiation of wavelength up to 200 nm, enables to tailor various properties in immersion lithography by a choice of the resin structure, and can be produced from readily available and easily handleable raw materials. <P>COPYRIGHT: (C)2010,JPO&INPIT |
