发明名称 ORGANIC THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME
摘要 <p>PURPOSE: An organic thin film transistor and a manufacturing method thereof are provided to simplify a process by forming a polymer insulating film with different material properties due to a one-time spin coating. CONSTITUTION: An organic insulating film(40) is formed on a substrate(10). A gate electrode(50) is formed near the organic insulating film. An active layer is symmetrical with the gate electrode while interposing the organic insulting film. A source/drain electrode(20) is located on both sides of the gate electrode. The organic insulating film comprises a diblock copolymer which forms a lamella structure.</p>
申请公布号 KR20100066285(A) 申请公布日期 2010.06.17
申请号 KR20090027376 申请日期 2009.03.31
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 NOH, YONG YOUNG;KANG, SEOK JU;KOO, JAE BON;YOU, IN KYU;BAEG, KANG JUN
分类号 H01L29/786;B32B27/28 主分类号 H01L29/786
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