发明名称 Microelectronic device including bridging interconnect to top conductive layer of passive embedded structure and method of making same
摘要 A microelectronic device, a method of fabricating the device, and a system including the device. The device includes: a substrate including a polymer build-up layer, and a passive structure embedded in the substrate. The passive structure includes a top conductive layer overlying the polymer build-up layer, a dielectric layer overlying the top conductive layer, and a bottom conductive layer overlying the dielectric layer. The device further includes a conductive via extending through the polymer build-up layer and electrically insulated from the bottom conductive layer, an insulation material insulating the conductive via from the bottom conductive layer, and a bridging interconnect disposed at a side of the top conductive layer facing away from the dielectric layer, the bridging interconnect electrically connecting the conductive via to the top conductive layer.
申请公布号 US7738257(B2) 申请公布日期 2010.06.15
申请号 US20060610385 申请日期 2006.12.13
申请人 INTEL CORPORATION 发明人 SALAMA ISLAM;MIN YONGKI;SEH HUANKIAT
分类号 H05K1/18 主分类号 H05K1/18
代理机构 代理人
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