| 摘要 |
A negative word line voltage generator for semiconductor memory device includes a comparison unit configured to compare a reference voltage and a feedback voltage and to output a comparison result as an output signal, a pull-down driving unit configured to pull down a negative word line voltage in response to an output signal of the comparison unit, a sub pull-down driving unit configured to pull down a voltage level of the negative word line voltage node additionally during an activation period of a precharge signal, and a feedback unit configured to provide the feedback voltage corresponding to a voltage level of the negative word line voltage.
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