| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a laminated wafer by which a laminated wafer having an active layer with superior film thickness uniformity can be manufactured inexpensively. SOLUTION: After oxygen ions are implanted in the wafer for the active layer at a high substrate temperature exceeding 200°C in a step of implanting the oxygen ions in the wafer for the active layer, oxygen ion implantation at a low substrate temperature of 200°C is performed at least once including a case wherein an acceleration voltage is made higher than that of the high-temperature oxygen implantation, thereby an oxygen ion implanted layer is formed, and in a subsequent heat treatment on the wafer for the active layer, heat treatment is carried out at a temperature of ≤1,200°C to put an implanted ion maximum region by the high-temperature implantation and an amorphous layer by the low-temperature implantation together in one. COPYRIGHT: (C)2010,JPO&INPIT |
