发明名称 |
Light emitting device and method of manufacturing the same |
摘要 |
The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer (50); a second conductive type semiconductor layer (21) formed on the second electrode layer (50); an active layer (22) formed on the second conductive type semiconductor layer (21); a first conductive type semiconductor layer (23) formed with a first photonic crystal that includes a mask layer (71) and an air gap (72) formed on the active layer (22); and a first electrode layer (60) formed on the first conductive type semiconductor layer (23).
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申请公布号 |
EP2194587(A2) |
申请公布日期 |
2010.06.09 |
申请号 |
EP20090177654 |
申请日期 |
2009.12.01 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
KIM, SUNG KYUNG;CHO, HYUN KYONG;PARK, GYEONG GEUN |
分类号 |
H01L33/20 |
主分类号 |
H01L33/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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