| 摘要 |
907,269. Semi-conductor devices. SARKES TARZIAN Inc. Nov. 13, 1959 [Nov. 14, 1958], No. 39957/61. Divided out of 907,268. Class 37. A diode comprises a semi-conductor wafer 11 having a PN junction 12 therein, two leads 14, 15 directly connected to the wafer on opposite sides of the junction, a resilient, gas and liquid impervious member 20 completely enclosing the wafer and adjoining portions of the leads, and a solid plastic material 21 enclosing the resilient member and adjacent portions of the leads. As shown, a PN junction is formed in a silicon monocrystalline wafer of N-type conductivity by alloying an impurity into one face thereof, this face being afterwards connected to lead 14 of silver- or gold-plated copper wire, or of pure silver, and covered with a dot 13 of aluminium and tin. A copper lead 15 is soldered to the N-side of wafer 11 by means of a tin dot 16. The resilient member 20 may be of silicon rubber and the solid material 21 of an epoxy resin which contracts when cured to compress member 20 against wafer 11 and leads 14, 15. |
